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document number: 93181 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 1 fast recovery diodes (hockey puk version), 810/910 a sd823c..c series vishay high power products features ? high power fast recovery diode series ? 2.0 to 3.0 s recovery time ? high voltage ratings up to 2500 v ? high current capability ? optimized turn-on and turn-off characteristics ? low forward recovery ? fast and soft reverse recovery ? press puk encapsulation ? hockey puk version case style b-43 ? maximum junction temperature 150 c ? lead (pb)-free ? designed and qualified for industrial level typical applications ? snubber diode for gto ? high voltage freewheeling diode ? fast recovery rectifier applications electrical specifications product summary i f(av) 810/910 a b-43 rohs compliant major ratings and characteristics parameter test conditions sd823c..c units s20 s30 i f(av) 810 910 a t hs 55 55 c i f(rms) 1500 1690 a i fsm 50 hz 9300 9600 60 hz 9730 10 050 v rrm range 1200 to 2500 1200 to 2500 v t rr 2.0 3.0 s t j 25 c t j - 40 to 150 voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = t j maximum ma sd823c..c 12 1200 1300 50 16 1600 1700 20 2000 2100 25 2500 2600
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93181 2 revision: 14-may-08 sd823c..c series vishay high power products fast recovery diodes (hockey puk version), 810/910 a forward conduction parameter symbol test conditions sd823c..c units s20 s30 maximum average forward current at heatsink temperature i f(av) 180 conduction, half sine wave double side (single side) cooled 810 (425) 910 (470) a 55 (85) 55 (85) c maximum rms forward current i f(rms) 25 c heatsink temperature double side cooled 1500 1690 a maximum peak, one-cycle forward, non-repetitive current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 9300 9600 t = 8.3 ms 9730 10 050 t = 10 ms 100 % v rrm reapplied 7820 8070 t = 8.3 ms 8190 8450 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 432 460 ka 2 s t = 8.3 ms 395 420 t = 10 ms 100 % v rrm reapplied 306 326 t = 8.3 ms 279 297 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 4320 4600 ka 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 1.00 0.95 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j = t j maximum 1.11 1.06 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.80 0.60 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j = t j maximum 0.76 0.57 maximum forward voltage drop v fm i pk = 1500 a, t j = t j maximum t p = 10 ms sinusoidal wave 2.20 1.85 v recovery characteristics code maximum value at t j = 25 c test conditions typical values at t j = 125 c t rr at 25 % i rrm (s) i pk square pulse (a) di/dt (a/s) v r (v) t rr at 25 % i rrm (s) q rr (c) i rr (a) s20 2.0 1000 50 - 50 3.5 240 110 s30 3.0 5.0 380 130 thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, case junction to heatsink r thj-hs dc operation single side cooled 0.076 k/w dc operation double side cooled 0.038 mounting force, 10 % 9800 (1000) n (kg) approximate weight 83 g case style see dimensions - link at the end of datasheet b-43 i fm t rr dir dt i rm(rec) q rr t
document number: 93181 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 3 sd823c..c series fast recovery diodes (hockey puk version), 810/910 a vishay high power products note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at diffe rent conduction angles than dc fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.007 0.007 0.005 0.005 t j = t j maximum k/w 120 0.008 0.008 0.008 0.008 90 0.010 0.010 0.011 0.011 60 0.015 0.015 0.016 0.016 30 0.026 0.026 0.026 0.026 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 700 30 60 90 120 180 average forward current (a) maximum allowable heatsink temperature (c) conduction angle sd823c..s20c se rie s (single side cooled) r (dc) = 0.076 k/ w thj-hs 20 40 60 80 100 120 140 160 0 200 400 600 800 1000 30 60 90 180 dc 120 average forward current (a) maximum allowable heatsink temperature (c) conduc tion period sd823c..s20c series (single side cooled) r (dc) = 0.076 k/ w thj-hs 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 700 30 60 90 120 180 average forward current (a) maximum allowable heatsink temperature (c) conduction angle sd 8 2 3 c . . s3 0 c se r i e s (single side cooled) r (dc) = 0.076 k/ w thj-hs 0 20 40 60 80 100 120 140 160 0 200 400 600 800 1000 1200 30 60 90 180 dc 120 average forward current (a) maximum allowable heatsink temperature (c) conduction period sd823c..s30c se rie s (single side cooled) r (dc) = 0.076 k/ w thj-hs
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93181 4 revision: 14-may-08 sd823c..c series vishay high power products fast recovery diodes (hockey puk version), 810/910 a fig. 5 - current ratings characteristics fig. 6 - current ratings characteristics fig. 7 - current ratings characteristics fig. 8 - current ratings characteristics fig. 9 - forward power loss characteristics fig. 10 - forward power loss characteristics 0 20 40 60 80 100 120 140 160 0 200 400 600 800 1000 30 60 90 120 180 average forward current (a) maximum allowable heatsink temperature (c) conduction angle sd 8 2 3 c . . s2 0 c se r i e s (double side cooled) r (dc) = 0.038 k/ w thj-hs 0 20 40 60 80 100 120 140 160 0 250 500 750 1000 1250 1500 30 60 90 180 dc 120 average forward current (a) maximum allowable heatsink temperature (c) conduction period sd 8 2 3 c . . s2 0 c se r i e s (double side cooled) r (dc) = 0.038 k/ w thj-hs 0 20 40 60 80 100 120 140 160 0 200 400 600 800 1000 1200 30 60 90 120 180 average forward current (a) maximum allowable heatsink temperature (c) conduction angle sd823c..s30c serie s (double side cooled) r (dc) = 0.038 k/ w thj-hs 0 20 40 60 80 100 120 140 160 0 400 800 1200 1600 2000 30 60 90 180 dc 120 average forward current (a) maximum allowable heatsink temperature (c) conduction period sd823c..s30c series (double side cooled) r (dc) = 0.038 k/ w thj-hs 0 500 1000 1500 2000 2500 3000 0 200 400 600 800 1000 180 120 90 60 30 average forward current (a) maximum average forward power loss (w) rm s li m i t conduction angle sd 8 2 3 c . . s2 0 c se r i e s t = 150c j 0 500 1000 1500 2000 2500 3000 3500 0 200 400 600 800 1000 1200 1400 1600 dc 180 120 90 60 30 average forward current (a) rm s li m i t maximum average forward power loss (w) conduc tion period sd823c..s20c se rie s t = 1 5 0 c j
document number: 93181 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 5 sd823c..c series fast recovery diodes (hockey puk version), 810/910 a vishay high power products fig. 11 - forward power loss characteristics fig. 12 - forward power loss characteristics fig. 13 - maximum non-repetitive surge current fig. 14 - maximum non-repetitive surge current fig. 15 - maximum non-repetitive surge current fig. 16 - maximum non-repetitive surge current 0 500 1000 1500 2000 2500 3000 0 200 400 600 800 1000 1200 180 120 90 60 30 average forward current (a) maximum average forw ard power loss (w) rm s lim i t conduction angle sd823c..s30c serie s t = 150c j 0 500 1000 1500 2000 2500 3000 3500 0 400 800 1200 1600 2000 dc 180 120 90 60 30 ave ra g e fo rw a rd current (a) rm s li m it maximum average forward power loss (w) conduc tion period sd 8 2 3 c . . s3 0 c se r i e s t = 150c j 2000 3000 4000 5000 6000 7000 8000 9000 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave forward current (a) sd823c..s20c serie s initia l t = 150 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j 2000 3000 4000 5000 6000 7000 8000 9000 10000 0.01 0.1 1 pu lse tra in d ura t io n ( s) maximum non repetitive surge current peak half sine wave forward current (a) initia l t = 150c no voltage reapplied rated v reapplied versus pulse train dura tion. sd 8 2 3 c . . s2 0 c se r i e s rrm j 3000 4000 5000 6000 7000 8000 9000 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave forward current (a) sd823c..s30c serie s init ia l t = 150 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j 2000 3000 4000 5000 6000 7000 8000 9000 10000 0.01 0.1 1 pulse train duration (s) pe a k ha lf s ine wa ve forw a rd curre nt ( a) init ia l t = 150c no vo lta g e rea p p lied rated v reapplied j rrm sd 8 2 3 c . . s3 0 c se r i e s versus pulse train dura tio n. maximum non repetitive surge current
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93181 6 revision: 14-may-08 sd823c..c series vishay high power products fast recovery diodes (hockey puk version), 810/910 a fig. 17 - forward voltage drop characteristics fig . 18 - forward voltage drop characteristics fig. 19 - thermal impedance z thj-hs characteristic fig. 20 - typical forward recovery characteristics f ig. 21 - typical forward re covery characteristics 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t = 2 5 c j instantaneous forward voltage (v) instantaneous forward current (a) t = 150c j sd 8 2 3 c . . s2 0 c se r i e s 100 1000 10000 0.511.522.533.54 t = 2 5 c j instantaneous forward voltage (v) instantaneous forward current (a) t = 150c j sd823c..s30c se rie s 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 square wave pulse duration (s) thj-hs transient thermal impedanc e z (k/ w) steady state value r = 0.076 k/ w (single side cooled) r = 0.038 k/ w (double side cooled ) (dc operation) thj-hs thj-hs sd 8 2 3 c . . s2 0 / s3 0 c se r i e s 0 20 40 60 80 100 0 400 800 1200 1600 2000 t = 2 5 c j forw ard rec overy (v) t = 150c j rate of rise of forward current - di/dt (a/us) sd 8 2 3 c . . s2 0 c se r i e s i v fp 0 20 40 60 80 100 0 400 800 1200 1600 2000 t = 2 5 c j fo r w a r d re c o v e ry ( v ) t = 150c j rate of rise of forward current - di/dt (a/us) sd 8 2 3 c . . s3 0 c se r i e s i v fp
document number: 93181 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 7 sd823c..c series fast recovery diodes (hockey puk version), 810/910 a vishay high power products fig. 22 - recovery time characteristics fig. 23 - recovery c harge characteristics fig. 24 - recovery current characteristics fig. 25 - recovery time characteristics fig. 26 - recovery charge characteristics fig. 27 - recovery current characteristics 2 2.5 3 3.5 4 4.5 5 5.5 6 10 100 1000 ra t e o f fa l l o f fo r w a r d c u r r e n t - d i / d t ( a / s) maximum reverse recovery time - trr (s) 500 a i = 1000 a s ine pulse 150 a fm sd823c..s20c se rie s t = 150 c; v > 100v j r 0 100 200 300 400 500 600 700 800 0 50 100 150 200 250 300 m a x i m u m re v e r se re c o v e r y c h a r g e - q r r ( c ) rate of fall of forward current - di/dt (a/s) 500 a i = 1000 a si n e pu l se 150 a fm sd823c..s20c series t = 150 c; v > 100v j r 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 250 300 ma ximum reverse rec overy current - irr ( a) 500 a rate of fall of forward current - di/dt (a/s) i = 1000 a si n e pu l se 150 a fm sd 8 2 3 c . . s2 0 c se r i e s t = 150 c; v > 100v r j 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 10 100 1000 ra te of fa ll of forwa rd current - d i/ d t (a/ s) maximum reverse recovery time - trr (s) 500 a i = 1000 a si n e pu l se fm 150 a sd 8 2 3 c . . s3 0 c se r i e s t = 150 c; v > 100v j r 0 200 400 600 800 1000 1200 0 50 100 150 200 250 300 m a x i m u m re v e r se re c o v e r y c h a r g e - q r r ( c ) rate of fall of forward current - di/dt (a/s) 500 a i = 1000 a si n e pu l se 150 a fm sd823c..s30c se rie s t = 150 c; v > 100v j r 0 50 100 150 200 250 300 350 400 450 500 550 0 50 100 150 200 250 300 ma ximum reve rse rec o very current - irr ( a) 500 a ra t e o f fa l l o f fo rw a r d c u r re n t - d i / d t ( a / s) 150 a i = 1000 a si n e p u l s e fm sd 8 2 3 c . . s3 0 c se r i e s t = 150 c; v > 100v j r
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93181 8 revision: 14-may-08 sd823c..c series vishay high power products fast recovery diodes (hockey puk version), 810/910 a fig. 28 - maximum total energy loss per pulse c haracteristics fig. 29 - frequency characteristics fig. 30 - maximum total energy loss per pulse c haracteristics fig. 31 - frequency characteristics fig. 32 - maximum total energy loss per pulse characteristics fig. 33 - frequency characteristics 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pulse basewidth (s) peak forward current (a) 10 jo ule s p er p ulse 6 4 d v/ dt = 1000v/ s si n u s o i d a l pu l se 0.6 0.4 0.2 0.1 t = 150c, v = 800v j rrm sd 8 2 3 c . . s2 0 c se r i e s tp 0.08 1e2 1e3 1e4 1e11e21e31e4 pu lse ba se w id t h ( s) 50 hz 200 10000 100 4000 dv/dt = 1000v/us 20000 400 15000 1000 2000 6000 peak forward current (a) t = 5 5 c , v = 8 0 0 v c rrm sd 8 2 3 c . . s2 0 c se r i e s si n u s o i d a l pu l se tp 3000 1e2 1e3 1e4 1 e1 1 e2 1 e3 1 e4 1 2 pulse basewidth (s) 4 10 jo ules p er p ulse 6 trapezoidal pulse peak forward current (a) t = 150c, v = 800v dv/dt = 1000v/s d i/ d t = 300a/ s 0.6 0.4 j rrm sd 8 2 3 c . . s2 0 c se r i e s tp 0.8 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pu lse ba se w id t h ( s) 50 hz 100 200 400 1000 2000 4000 3000 600 6000 10000 15000 peak forward current (a) 20000 sd 8 2 3 c . . s2 0 c se r i e s t = 55c, v = 800v dv/dt = 1000v/us, di/ dt = 300a/us trapezoidal pulse c rrm tp 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pu lse ba se w id t h ( s) 4 10 jo ules p er p ulse 6 trapezoidal pulse peak forward current (a) 0.6 0.4 t = 1 5 0 c , v = 8 0 0 v dv/dt = 1000v/s di/dt = 100a/s j rrm sd 8 2 3 c . . s2 0 c se r i e s tp 0.2 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pu lse ba se w id t h ( s) tr a p e zo i d a l p u l se 50 hz 100 200 400 1000 2000 4000 3000 600 6000 10000 15000 peak forward current (a) 20000 dv/dt = 1000v/us, di/dt = 100a/us t = 55c, v = 800v c rrm sd 8 2 3 c . . s 20c series tp
document number: 93181 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 9 sd823c..c series fast recovery diodes (hockey puk version), 810/910 a vishay high power products fig. 34 - maximum total energy loss per pulse characteristics fig. 35 - frequency characteristics fig. 36 - maximum total energy loss per pulse characteristics fig. 37 - frequency characteristics fig. 38 - maximum total energy loss per pulse characteristics fig. 39 - frequency characteristics 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pu lse ba se w id t h ( s) pea k forwa rd current (a) 10 jo ule s p er p ulse 6 4 d v/ d t = 1000v/ s si n u s o i d a l pu l s e t = 150c, v = 800v j rrm 0.6 0.4 0.2 0.1 sd823c..s30c series tp 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pu lse ba se w id t h ( s) 50 hz 200 10000 100 4000 dv/dt = 1000v/us 20000 400 15000 1000 2000 6000 peak forward current (a) t = 55c, v = 800v c rrm sd 8 2 3 c . . s3 0 c se r i e s sinusoidal pulse tp 3000 1e2 1e3 1e4 1e11e21e31e4 1 2 pulse basewidth (s) 4 10 jo ules p er p ulse 6 peak forward current (a) dv/dt = 1000v/s di/dt = 300a/s t = 1 5 0 c , v = 8 0 0 v 0.6 0.4 j rrm sd823c..s30c series trapezoida l pulse tp 0.8 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pu lse ba se w id t h ( s) trapezoidal pulse 50 hz 100 200 400 1000 1500 2000 4000 3000 600 6000 10000 15000 pea k fo rw a rd c urren t ( a) t = 55c, v = 800v dv/dt = 1000v/us, di/dt = 300a/us c rrm sd 8 2 3 c . . s3 0 c se r i e s tp 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pu lse ba se w id t h ( s) 4 10 jo ules p er p ulse 6 trapezoidal pulse peak forward current (a) 0.6 0.4 t = 150c, v = 800v dv/dt = 1000v/s di/dt = 100a/s j rrm sd 8 2 3 c . . s3 0 c se r i e s tp 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pu lse ba se w id t h ( s) 50 hz 200 10000 100 4000 dv/dt = 1000v/us 20000 400 15000 1000 2000 6000 peak forward current (a) t = 55c, v = 800v c rrm sd 8 2 3 c . . s3 0 c se r i e s sinusoidal pulse tp 3000
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93181 10 revision: 14-may-08 sd823c..c series vishay high power products fast recovery diodes (hockey puk version), 810/910 a ordering information table 1 - diode 2 - essential part number 3 - 3 = fast recovery 4 - c = ceramic puk 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 -t rr code 7 - c = puk case b-43 device code 5 13 24 67 sd 82 3 c 25 s20 c links to related documents dimensions http://www.vishay.com/doc?95249
document number: 95249 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 26-nov-07 1 b-43 outline dimensions vishay semiconductors dimensions in millimeters (inches) 42 (1.65) dia. max. 40.5 (1.59) dia. max. quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specifications) 3.5 (0.14) dia. nom. x 1.8 (0.07) deep min. both ends 0.8 (0.03) min. both ends 25.3 (1) dia. max. 2 places 14.4 (0.57) 15.4 (0.61)
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